John Muth

Bio

The goal: Grow novel semiconductor materials, characterize their optical and eletrical properties, and fabricate novel optoelectronic devices. Sucessful intergration of these tasks will create enabling photonic technologies. This lab works with wide band gap semiconductors includling Gallium Nitride and Zinc Oxide and a variety materials to make quantum dots and other nanostructures.

Area(s) of Expertise

Physical Electronics, Photonics & Magnetics

Publications

• GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition , APPLIED PHYSICS LETTERS (2024)
• Growth and characterization of AlInN/GaN superlattices , JOURNAL OF CRYSTAL GROWTH (2024)
• A Modular Endoscopic Tool and Laser Ablation Test-Bed for Studying Biological Tissue Ablation Control Strategies , IEEE TRANSACTIONS ON MEDICAL ROBOTICS AND BIONICS (2023)
• Designing and Testing a Closed-Loop Magnetically Actuated Laser Scanning System for Tissue Ablation , JOURNAL OF MEDICAL DEVICES-TRANSACTIONS OF THE ASME (2021)
• Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)] , APPLIED PHYSICS LETTERS (2021)
• Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy , JOURNAL OF APPLIED PHYSICS (2020)
• Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness , APPLIED PHYSICS LETTERS (2020)
• Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors , PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)
• Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography , IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
• Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3 , PHYSICA B-CONDENSED MATTER (2019)

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